to-126c plastic-encapsulate transistors 3DD13003 transistor (npn) features high total power disspation maximum ratings (t a =25 unless otherwise noted) symbol para meter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current -continuous 1.5 a p c collector power dissipation 1. 2 5 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1 ma, i e =0 700 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 400 v emitter-base breakdown voltage v (br)ebo i e = 1 ma, i c =0 9 v collector cut-off current i cbo v cb =700v,i e =0 1 ma collector cut-off current i ceo v ce =400v,i b =0 0.5 ma emitter cut-off current i ebo v eb =9v, i c =0 1 ma h fe ( 1 ) v ce =5v, i c = 0.5 a 8 40 dc current gain h fe ( 2 ) v ce =5v, i c = 1.5a 5 collector-emitter saturation voltage v ce(sat) i c =1a,i b =0.25a v base-emitter saturation voltage v be(sat) i c =1a,i b =0.25a 1.2 v transition frequency f t v ce =10v,i & =100ma, f =1mhz 5 mhz fall time t f i c =1a, i b1 =-i b2 =0.2a, v cc =100v 0.5 s to-126c 1.base 2.collector 3.emitter storage time t s , & p $ s c , mar ,201 2 base-emitter voltage v be i e = 2 a 3 v & / $ 6 6 , ) , & $ 7 , 2 1 2 ) h fe 5 d q n 5 d q j h 8-10 10-15 15-2 0 20-2 5 25-30 30-3 5 35-4 0 classification of t s rank a1 a2 b1 b2 range 2-2.5 ( s ) 2.5-3( s ) 3-3.5( s ) 3.5-4 ( s ) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,mar,2012
200 10 1 10 100 1000 100 1000 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1 10 100 1000 10 100 1000 1 10 100 1000 1 10 100 0.1 1 10 1 10 100 1000 0.0 0.3 0.6 0.9 1.2 1 10 100 1000 02468 0 200 400 600 800 1 i c f t ?? common emitter v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) 20 100 =4 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 2000 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) t a =100 t a =25 =4 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 1500 3DD13003 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v 20 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) 5000 1500 1500 collector current i c (ma) base-emmiter voltage v be (v) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =5v 1500 static charistic common emitter t a =25 30ma 27ma 24ma 21ma 18ma 15ma 12ma 9ma 6ma i b =3ma collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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